july 1998 f dp6670a l / fdb6670a l n-channel logic level powertrench tm mosfet general description features _________________________________________________________________________________ absolute maximum ratings t c = 25c unless otherwise noted symbol parameter f dp6670a l f db6670a l units v dss drain-source voltage 30 v v gss gate-source voltage 20 v i d drain current - continuous (note 1) 80 a - pulsed (note 1) 240 p d total power dissipation @ t c = 25 c 75 w derate above 25 c 0.5 w/ c t j ,t stg operating and storage temperature range -65 to 175 c t l maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 275 c thermal characteristics r q jc thermal resistance, junction-to-case 2 c/w r q ja thermal resistance, junction-to-ambient 62.5 c/w f dp6670a l rev.c 80 a, 3 0 v. r ds(on ) = 0.0065 w @ v gs =10 v, r ds(on) = 0.0085 w @ v gs = 4.5 v. critical dc electrical parameters specified at elevated temperature. rugged internal source-drain diode can eliminate the need for an external zener diode transient suppressor. high performance trench technology for extremely low r ds(on) . 175c maximum junction temperature rating. this n-channel logic level mosfet has been designed specifically to improve the overall efficiency of dc/ dc converters using either synchronous or conventional switching pwm controllers. these mosfets feature faster switching and lower gate charge than other mosfets with comparable r ds(on) specifications. the result is a mosfet that is easy and safer to drive (even at very high frequencies), and dc/ dc power supply designs with higher overall efficiency . s d g ? 1998 fairchild semiconductor corporation
electrical characteristics (t c = 25c unless otherwise noted) symbol parameter conditions min typ max unit drain-source avalanche ratings (note 1) w dss single pulse drain-source avalanche energy v dd = 15 v, i d = 80 a 300 mj i ar maximum drain-source avalanche current 80 a off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 30 v d bv dss / d t j breakdown voltage temp. coefficient i d = 250 a , referenced to 25 o c 22 mv/ o c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 a i gssf gate - body leakage, forward v gs = 20 v, v ds = 0 v 100 na i gssr gate - body leakage, reverse v gs = -20 v, v ds = 0 v -100 na on characteristics (note 2) v gs (th) gate threshold voltage v ds = v gs , i d = 250 a 1 1.5 3 v d v gs(th) / d t j gate threshold voltage temp.coefficient i d = 250 a , referenced to 25 o c -5 mv/ o c r ds(on) static drain-source on-resistance v gs = 10 v, i d = 40 a 0.005 0.0065 w t j = 125 c 0.0072 0.0091 v gs = 4.5 v, i d = 37 a 0.0067 0.0085 i d (on) on-state drain current v gs = 10 v , v ds = 10 v 80 a g fs forward transconductance v ds = 10 v, i d = 40 a 86 s dynamic characteristics c iss input capacitance v ds = 1 5 v, v gs = 0 v, f = 1.0 mhz 3200 pf c oss output capacitance 820 pf c rss reverse transfer capacitance 400 pf switching ch aracteristics (note 1 ) t d(on) turn - on delay time v dd = 10 v, i d = 1 a, v gs = 10 v, r gen = 6 w 15 27 ns t r turn - on rise time 15 27 ns t d(off) turn - off delay time 85 105 ns t f turn - off fall time 42 68 ns q g total gate charge v ds = 15 v i d = 40 a, v gs = 5 v 35 50 nc q gs gate-source charge 9 nc q gd gate-drain charge 16 nc drain-source diode characteristics i s maximum continuous drain-source diode forward current (note 1 ) 80 a i sm maximum pulsed drain-source diode forward current (note 1 ) 240 a v sd drain-source diode forward voltage v gs = 0 v, i s = 40 a (note1 ) 0.9 1.3 v t rr reverse recovery time v gs = 0 v, i f = 40 a di f /dt = 100 a/s 32 55 ns i rr reverse recovery current 0.83 5 a notes 1. pulse test: pulse width < 300 s, duty cycle < 2.0%. f dp6670a l rev.c
f dp6670a l rev.c typical electrical characteristics 0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 v , drain-source voltage (v) i , drain-source current (a) ds d 6.0v 4.5v 3.0v v = 10v gs 2.5v 3.5v -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 t , junction temperature (c) drain-source on-resistance j r ,normalized ds(on) v = 10v gs i = 40a d 1 1.5 2 2.5 3 3.5 4 0 12 24 36 48 60 v , gate to source voltage (v) i , drain current (a) v = 10v ds gs d 125c t = -55c a 25c figure 5. transfer characteristics . 0 20 40 60 80 100 0.5 1 1.5 2 2.5 i , drain current (a) drain-source on-resistance 4.5v 10v 6.0v 4.0v v =3.5v gs d r , normalized ds(on) figure 1. on-region characteristics. 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.001 0.01 0.1 1 10 60 v , body diode forward voltage (v) i , reverse drain current (a) t = 125c a 25c -55c v =0v gs sd s 2 4 6 8 10 0 0.005 0.01 0.015 0.02 v , gate to source voltage (v) gs r , on-resistance (ohm) ds(on) 25c i =40a d t =125c a figure 3. on-resistance variation with temperature . figure 4 . on-resistance variation with gate-to -source voltage. figure 2. on-resistance variation with drain current and gate voltage . figure 6 . body diode forward voltage varia tion with source current and temperature.
f dp6670a l rev.c typical electrical characteristics (continued) 0 10 20 30 40 50 60 70 80 0 2 4 6 8 10 q , gate charge (nc) v , gate-source voltage (v) g gs i = 40a d v = 5v ds 10v 15v 0.1 0.2 0.5 1 2 5 10 30 100 200 500 1000 2000 4000 7000 v , drain to source voltage (v) capacitance (pf) ds c iss f = 1 mhz v = 0 v gs c oss c rss figure 8. capacitance characteristics . figure 7 . gate charge characteristics. 0.3 0.5 1 2 5 10 30 60 0.5 1 2 5 10 20 50 100 200 500 v , drain-source voltage (v) i , drain current (a) ds d 10ms 1s 100ms 10s dc r limit ds(on) v = 10v single pulse r = 2 c/w t = 25 c gs c q jc o 100s figure 9. maximum safe operating area. figure 10 . single pulse maximum power dissipation. 0.01 0.05 0.1 0.5 1 5 10 50 100 500 1000 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 t ,time (ms) transient thermal resistance single pulse d = 0.5 0.1 0.05 0.02 0.01 0.2 r(t), normalized effective 1 duty cycle, d = t /t 1 2 r (t) = r(t) * r r = 2c/w q jc q jc q jc t - t = p * r (t) q jc c j p(pk) t 1 t 2 figure 11 . transient thermal response curve . 0.01 0.1 1 10 100 1,000 0 500 1000 1500 2000 2500 3000 single pulse time (sec) power (w) single pulse r =2c/w t = 25c q jc c
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